Formation of diluted III–V nitride thin films by N ion implantation

iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNₓP₁ˍₓ was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implantedInNₓP₁ˍₓ was at least a factor of 2 higher than that in GaNₓAs₁ˍₓ under similar processing conditions. AlyGa1−yNₓAs₁ˍₓ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNₓAs₁ˍₓalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model

Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon

The magnetic rare earth element gadolinium (Gd) was doped into thin films of amorphous carbon (hydrogenated \textit{a}-C:H, or hydrogen-free \textit{a}-C) using magnetron co-sputtering. The Gd acted as a magnetic as well as an electrical dopant, resulting in an enormous negative magnetoresistance below a temperature ($T'$). Hydrogen was introduced to control the amorphous carbon bonding structure. High-resolution electron microscopy, ion-beam analysis and Raman spectroscopy were used to characterize the influence of Gd doping on the \textit{a-}Gd$_x$C$_{1-x}$(:H$_y$) film morphology, composition, density and bonding. The films were largely amorphous and homogeneous up to $x$=22.0 at.%. As the Gd doping increased, the $sp^{2}$-bonded carbon atoms evolved from carbon chains to 6-member graphitic rings. Incorporation of H opened up the graphitic rings and stabilized a $sp^{2}$-rich carbon-chain random network. The transport properties not only depended on Gd doping, but were also very sensitive to the $sp^{2}$ ordering. Magnetic properties, such as the spin-glass freezing temperature and susceptibility, scaled with the Gd concentration.Comment: 9 figure

Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure

Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200

High fidelity quantum memory via dynamical decoupling: theory and experiment

Quantum information processing requires overcoming decoherence---the loss of "quantumness" due to the inevitable interaction between the quantum system and its environment. One approach towards a solution is quantum dynamical decoupling---a method employing strong and frequent pulses applied to the qubits. Here we report on the first experimental test of the concatenated dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse sequences. Using nuclear magnetic resonance, we demonstrate a near order of magnitude improvement in the decay time of stored quantum states. In conjunction with recent results on high fidelity quantum gates using CDD, our results suggest that quantum dynamical decoupling should be used as a first layer of defense against decoherence in quantum information processing implementations, and can be a stand-alone solution in the right parameter regime.Comment: 6 pages, 3 figures. Published version. This paper was initially entitled "Quantum gates via concatenated dynamical decoupling: theory and experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure, Xinhua Peng, and Dieter Suter. That original version split into two papers: http://arxiv.org/abs/1012.3433 (theory only) and the current pape

Wetting-regulated gas-involving (photo)electrocatalysis: biomimetics in energy conversion

(Photo)electrolysis of water or gases with water to species serving as industrial feedstocks and energy carriers, such as hydrogen, ammonia, ethylene, propanol, etc., has drawn tremendous attention. Moreover, these processes can often be driven by renewable energy under ambient conditions as a sustainable alternative to traditional high-temperature and high-pressure synthesis methods. In addition to the extensive studies on catalyst development, increasing attention has been paid to the regulation of gas transport/diffusion behaviors during gas-involving (photo)electrocatalytic reactions towards the goal of creating industrially viable catalytic systems with high reaction rates, excellent long-term stabilities and near-unity selectivities. Biomimetic surfaces and systems with special wetting capabilities and structural advantages can shed light on the future design of (photo)electrodes and address long-standing challenges. This article is dedicated to bridging the fields of wetting and catalysis by reviewing the cutting-edge design methodologies of both gas-evolving and gas-consuming (photo)electrocatalytic systems. We first introduce the fundamentals of various in-air/underwater wetting states and their corresponding bioinspired structural properties. The relationship amongst the bubble transport behavior, wettability, and porosity/tortuosity is also discussed. Next, the latest implementations of wetting-related design principles for gas-evolving reactions (i.e. the hydrogen evolution reaction and oxygen evolution reaction) and gas-consuming reactions (i.e. the oxygen reduction reaction and CO2 reduction reaction) are summarized. For photoelectrode designs, additional factors are taken into account, such as light absorption and the separation, transport and recombination of photoinduced electrons and holes. The influences of wettability and 3D structuring of (photo)electrodes on the catalytic activity, stability and selectivity are analyzed to reveal the underlying mechanisms. Finally, remaining questions and related future perspectives are outlined.National Research Foundation (NRF)This work is supported by the eCO2EP programme funded by the Singapore National Research Foundation under its Campus for Research Excellence and Technological Enterprise (CREATE) programme through the Cambridge Centre for Advanced Research and Education in Singapore (CARES) and the Berkeley Educational Alliance for Research in Singapore (BEARS). W. S. Y. W and D. V. acknowledge the European Union’s Horizon 2020 research and innovation program LubISS No. 722497 and the ERC Advanced Grant (883631 DynaMo)

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl

A detailed study of the diastereoselective catalytic hydrogenation of 6-hydroxytetrahydroisoquinoline-(3R)-carboxylic ester intermediates

A key step towards a highly-selective antagonist of ionotropic glutamate receptors entails the diastereoselective arene hydrogenation of an enantiopure tetrahydroisoquinoline. An extensive screen using parallel reactors was conducted and led to the discovery of several Pd/C catalysts giving high yield and improved diastereoselectivity from 75 : 25 to 95 : 5. A detailed kinetic study of the best system was performed and supports the reduction occuring in two-steps.